pnp 2N5415 ? 2n5416 comset semiconductors 1/3 high voltage transistors the 2N5415 and 2n5416 are pnp transistors mounted in to-39 metal case . they are intended for use in high-voltage switching and linear amplifier applications. compliance to rohs absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 2N5415 -200 v 2n5416 -300 v cbo collector-base voltage (i e = 0) 2N5415 -200 v 2n5416 -350 v ebo emitter-base voltage (i c = 0) 2N5415 -4 v 2n5416 -6 i c collector current 2N5415 -200 ma 2n5416 i cm peak collector current 2N5415 -400 ma 2n5416 i bm peak base current 2N5415 -200 ma 2n5416 p d total power dissipation t amb = 50c 2N5415 1 w 2n5416 t case = 25c 2N5415 10 2n5416 t j junction temperature 2N5415 200 c 2n5416 t stg storage temperature range 2N5415 -65 to +200 c 2n5416 t amb operating ambient temperature 2N5415 -65 to +150 c 2n5416 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 150 c/w r thj-c thermal resistance, junction to case 17.5 c/w
pnp 2N5415 ? 2n5416 21/09/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = -175 v, i e =0 2N5415 - - -50 a v cb = -280 v, i e =0 2n5416 i ebo emitter cutoff current v eb = -4 v, i c =0 2N5415 - - -20 a v eb = -6 v, i c =0 2n5416 v ceo collector emitter breakdown voltage (*) i c = -10 ma, i b =0 2N5415 -200 - - v 2n5416 -300 - - h fe dc current gain (*) i c = -50 ma v ce = -10 v 2N5415 30 - 150 - 2n5416 30 - 120 v ce(sat) collector-emitter saturation voltage (*) i c = -50 ma i b = -5 ma 2N5415 - - -2.5 v 2n5416 v be base-emitter voltage (*) i c = -50 ma v ce = -10 v 2N5415 - - -1.5 v 2n5416 f t transition frequency i c = -10 ma v ce = -10 v, f = 5 mhz 2N5415 15 - - mhz 2n5416 c c collector capacitance i e = i e = 0, v cb = -10 v f = 1 mhz 2N5415 - - 15 pf 2n5416 c e emitter capacitance i c = i c = 0, v eb = -6 v f = 1 mhz 2N5415 - - 75 pf 2n5416 (*) pulse conditions : tp < 300 s, =1.5%
pnp 2N5415 ? 2n5416 21/09/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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